UF3C065080K3S

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Daļas numurs
UF3C065080K3S
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 650V/80mOhm SiC FAST CASCODE G3 REDUCED Rth

Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
14 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
6 V

Jaunākās atsauksmes

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

My package arrived wet, not know where occurs this fact, but working all right

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Quickly came to CET, all in one package. Look at the rules

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Saistītie atslēgvārdi UF3C

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