- Daļas numurs
- FF100R12RT4
- Kategorijas
- IGBT Modules
- RoHS
- Datu lapas
- Apraksts
- IGBT Modules IGBT Module w/ IGBT & Diode
FF100R12RT4
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2 V
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 555 W
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
- Unit Weight
Porduct kategorija
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Jaunākās atsauksmes
Thank You all fine, packed very well
Ulrich Bundke
Perfectly.
Sensofar Tech, SL
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Long Service and Russia!
Alex Yu
Jums var patikt
Cilvēki skatās FF100R12RT4, tad nopirka
FF100R12RT4 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi FF10
- FF100R12RT4 Integrēta
- FF100R12RT4 RoHS
- FF100R12RT4 PDF datu lapa
- FF100R12RT4 Datu lapas
- FF100R12RT4 Daļa. \ T
- FF100R12RT4 Pirkt
- FF100R12RT4 Izplatītājs
- FF100R12RT4 PDF
- FF100R12RT4 Komponents
- FF100R12RT4 IC
- FF100R12RT4 Lejupielādēt PDF failu
- FF100R12RT4 Lejupielādēt datu lapu
- FF100R12RT4 Piegāde
- FF100R12RT4 Piegādātājs
- FF100R12RT4 Cena
- FF100R12RT4 Datu lapas
- FF100R12RT4 Attēls
- FF100R12RT4 Bilde
- FF100R12RT4 Inventarizācija
- FF100R12RT4 Krājumi
- FF100R12RT4 Oriģināls
- FF100R12RT4 Lētākais
- FF100R12RT4 Teicami
- FF100R12RT4 Bez svina
- FF100R12RT4 Specifikācija
- FF100R12RT4 Karstie piedāvājumi
- FF100R12RT4 Break cena
- FF100R12RT4 Tehniskie dati
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