IKQ75N120CS6XKSA1

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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Continuous Collector Current at 25 C
150 A
Continuous Collector Current Ic Max
150 A
Gate-Emitter Leakage Current
600 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
880 W
Product Type
IGBT Transistors
Series
IGBT6
Technology
SI
Tradename
TRENCHSTOP

Jaunākās atsauksmes

Teşekkürler

fast delivery, item as described, thanks!!

Quickly came to CET, all in one package. Look at the rules

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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