Daļas numurs IKQ75N120CS6XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IKQ75N120CS6XKSA1 Apraksts IGBT Transistors INDUSTRY 14
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.85 V Configuration Single Continuous Collector Current at 25 C 150 A Continuous Collector Current Ic Max 150 A Gate-Emitter Leakage Current 600 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Part # Aliases Pd - Power Dissipation 880 W Product Type IGBT Transistors Series IGBT6 Technology SI Tradename TRENCHSTOP