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IKQ75N120CT2XKSA1

IKQ75N120CT2XKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Single
Continuous Collector Current at 25 C
150 A
Continuous Collector Current Ic Max
150 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO247-3-46
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
938 W
Product Type
IGBT Transistors
Technology
SI
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Teşekkürler
Yes, they are all here. :)
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Shipping a little 1 weeks, normal packing, the procedure is complete.
The goods are OK, thank you dealers.
Vairāk

Jums var patikt

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IKQ75N120CT2XKSA1
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IKQ75N120CT2XKSA1 Jaunumi

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