Daļas numurs UF3C065040K4S Kategorijas MOSFET RoHS Datu lapas UF3C065040K4S Apraksts MOSFET 650V 42mOhm SiC Cascode Fast
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Id - Continuous Drain Current 54 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 326 W Product Type MOSFET Qg - Gate Charge 43 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 52 Ohms Series UF3C Technology SiC Transistor Polarity N-Channel Transistor Type 1 N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 25 V Vgs th - Gate-Source Threshold Voltage 4 V