Daļas numurs SQ1922EEH-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ1922EEH-T1_GE3 Apraksts MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
Kategorijas MOSFET Configuration Dual Fall Time 6 ns Id - Continuous Drain Current 840 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-70-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.5 W Product Type MOSFET Qg - Gate Charge 700 pC Qualification AEC-Q101 Rds On - Drain-Source Resistance 350 mOhms Rise Time 12 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 10 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 1 V