Daļas numurs SQ3425EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3425EV-T1_GE3 Apraksts MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 28 ns Forward Transconductance - Min 9 S Id - Continuous Drain Current 7.4 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 10.3 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 49 mOhms Rise Time 26 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 41 ns Typical Turn-On Delay Time 11 ns Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 1.4 V