UF3C065080K4S

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Daļas numurs
UF3C065080K4S
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 650V 80mOhm SiC Cascode Fast

Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
20 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
21 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

Jaunākās atsauksmes

Teşekkürler

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

Everything is fine!

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