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XP151A13A0MR-G

XP151A13A0MR-G
Attēli ir tikai norādei
Daļas numurs
XP151A13A0MR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET Power MOSFET, 20V, 1A, N-Type, SOT-23
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
65 ns
Id - Continuous Drain Current
1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
500 mW (1/2 W)
Product Type
MOSFET
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
500 mV

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
packed pretty good, all is ok,-seller.
fast delivery
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Vairāk

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Saistītie atslēgvārdi XP15

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  • XP151A13A0MR-G RoHS
  • XP151A13A0MR-G PDF datu lapa
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  • XP151A13A0MR-G Daļa. \ T
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  • XP151A13A0MR-G PDF
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  • XP151A13A0MR-G IC
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  • XP151A13A0MR-G Specifikācija
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  • XP151A13A0MR-G Break cena
  • XP151A13A0MR-G Tehniskie dati

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