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XP151A12A2MR-G

XP151A12A2MR-G
Attēli ir tikai norādei
Daļas numurs
XP151A12A2MR-G
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET Power MOSFET, 20V, 1A, N-Type, SOT-23
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Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Id - Continuous Drain Current
1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
500 mW (1/2 W)
Product Type
MOSFET
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
700 mV

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
Good material. Great seller, efficient and insurance. Ok
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Vairāk

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Saistītie atslēgvārdi XP15

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  • XP151A12A2MR-G Specifikācija
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