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MJB45H11G

MJB45H11G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
5 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
40 MHz
Height
4.83 mm
Length
10.29 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Tube
Pd - Power Dissipation
50 W
Product Type
BJTs - Bipolar Transistors
Series
MJB45H11
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
9.65 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Fast shippng. Good quality. I recomend this seller.
Vairāk

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