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MJB45H11T4G

MJB45H11T4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
5 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
40 MHz
Height
4.83 mm
Length
10.29 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
50 W
Product Type
BJTs - Bipolar Transistors
Series
MJB45H11
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
9.65 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
Vairāk

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