FF150R12RT4

Attēli ir tikai norādei
Daļas numurs
FF150R12RT4
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules IGBT 1200V 150A

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Dual
Continuous Collector Current at 25 C
150 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
Module
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
790 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Jaunākās atsauksmes

Teşekkürler

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

it is safe and sound all, thank you seller!

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