Daļas numurs FF150R17KE4 Kategorijas IGBT Modules RoHS Datu lapas FF150R17KE4 Apraksts IGBT Modules IGBT Module 150A 1700V
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1700 V Collector-Emitter Saturation Voltage 2.45 V Configuration Dual Continuous Collector Current at 25 C 250 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case 62 mm Packaging Tray Part # Aliases Pd - Power Dissipation 1100 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight