Daļas numurs MJD112T4G Kategorijas Darlington Transistors RoHS Datu lapas MJD112T4G Apraksts Darlington Transistors 2A 100V Bipolar Power NPN
Kategorijas Darlington Transistors Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Configuration Single Continuous Collector Current 2 A DC Collector/Base Gain hfe Min 200, 500, 1000 Emitter- Base Voltage VEBO 5 V Height 2.38 mm Length 6.73 mm Maximum Collector Cut-off Current 20 uA Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 (DPAK) Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 20 W Product Type Darlington Transistors Series MJD112 Transistor Polarity NPN Unit Weight Width 6.22 mm