FF150R12MS4G

Attēli ir tikai norādei
Daļas numurs
FF150R12MS4G
Kategorijas
IGBT Modules
RoHS
Datu lapas
Apraksts
IGBT Modules N-CH 1.2KV 225A

Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.7 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Height
17 mm
Length
152 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Econo D
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
1250 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Width
62 mm

Jaunākās atsauksmes

Received, Fast shipping, not checked yet

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Takes 8 days to Japan. Good!

Decent quality, not минвелл certainly, but enough decent

Goods came in two weeks. Well packed. Track number tracked

Saistītie atslēgvārdi FF15

  • FF150R12MS4G Integrēta
  • FF150R12MS4G RoHS
  • FF150R12MS4G PDF datu lapa
  • FF150R12MS4G Datu lapas
  • FF150R12MS4G Daļa. \ T
  • FF150R12MS4G Pirkt
  • FF150R12MS4G Izplatītājs
  • FF150R12MS4G PDF
  • FF150R12MS4G Komponents
  • FF150R12MS4G IC
  • FF150R12MS4G Lejupielādēt PDF failu
  • FF150R12MS4G Lejupielādēt datu lapu
  • FF150R12MS4G Piegāde
  • FF150R12MS4G Piegādātājs
  • FF150R12MS4G Cena
  • FF150R12MS4G Datu lapas
  • FF150R12MS4G Attēls
  • FF150R12MS4G Bilde
  • FF150R12MS4G Inventarizācija
  • FF150R12MS4G Krājumi
  • FF150R12MS4G Oriģināls
  • FF150R12MS4G Lētākais
  • FF150R12MS4G Teicami
  • FF150R12MS4G Bez svina
  • FF150R12MS4G Specifikācija
  • FF150R12MS4G Karstie piedāvājumi
  • FF150R12MS4G Break cena
  • FF150R12MS4G Tehniskie dati