- Daļas numurs
- IKQ50N120CH3XKSA1
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKQ50N120CH3XKSA1
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 100 A
- Continuous Collector Current Ic Max
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 652 W
- Product Type
- IGBT Transistors
- Technology
- SI
- Unit Weight
Porduct kategorija
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Jaunākās atsauksmes
Takes 8 days to Japan. Good!
Alex Fragkos
Works. Find the price of this product is very good
Maxim Krasnov
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Works. Recommend
Rajiv
Jums var patikt
Cilvēki skatās IKQ50N120CH3XKSA1, tad nopirka
IKQ50N120CH3XKSA1 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKQ5
- IKQ50N120CH3XKSA1 Integrēta
- IKQ50N120CH3XKSA1 RoHS
- IKQ50N120CH3XKSA1 PDF datu lapa
- IKQ50N120CH3XKSA1 Datu lapas
- IKQ50N120CH3XKSA1 Daļa. \ T
- IKQ50N120CH3XKSA1 Pirkt
- IKQ50N120CH3XKSA1 Izplatītājs
- IKQ50N120CH3XKSA1 PDF
- IKQ50N120CH3XKSA1 Komponents
- IKQ50N120CH3XKSA1 IC
- IKQ50N120CH3XKSA1 Lejupielādēt PDF failu
- IKQ50N120CH3XKSA1 Lejupielādēt datu lapu
- IKQ50N120CH3XKSA1 Piegāde
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- IKQ50N120CH3XKSA1 Inventarizācija
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- IKQ50N120CH3XKSA1 Teicami
- IKQ50N120CH3XKSA1 Bez svina
- IKQ50N120CH3XKSA1 Specifikācija
- IKQ50N120CH3XKSA1 Karstie piedāvājumi
- IKQ50N120CH3XKSA1 Break cena
- IKQ50N120CH3XKSA1 Tehniskie dati
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