IKQ50N120CT2XKSA1

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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Single
Continuous Collector Current at 25 C
100 A
Continuous Collector Current Ic Max
100 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO247-3-46
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
652 W
Product Type
IGBT Transistors
Technology
SI
Unit Weight

Jaunākās atsauksmes

it is safe and sound all, thank you seller!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Long Service and Russia!

Good material. Great seller, efficient and insurance. Ok

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