Daļas numurs SQ1464EEH-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ1464EEH-T1_GE3 Apraksts MOSFET 60V Vds; +/-8V Vgs SOT-363/SC-70
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Forward Transconductance - Min 5.5 S Id - Continuous Drain Current 440 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 0.43 W Product Type MOSFET Qg - Gate Charge 4.1 nC Rds On - Drain-Source Resistance 1.41 Ohms Rise Time 21 ns Technology SI Transistor Polarity N-Channel Typical Turn-Off Delay Time 8 ns Typical Turn-On Delay Time 12 ns Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 450 mV