Daļas numurs SQ1431EH-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ1431EH-T1_GE3 Apraksts MOSFET 30V 3A 3W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 3 s Id - Continuous Drain Current 3 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3 W Product Type MOSFET Qg - Gate Charge 6.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 125 mOhms Rise Time 8 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 11 ns Typical Turn-On Delay Time 5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V