Daļas numurs SQ4937EY-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ4937EY-T1_GE3 Apraksts MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Dual Fall Time 8 ns, 8 ns Height 1.75 mm Id - Continuous Drain Current 5 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 3.3 W Product Type MOSFET Qg - Gate Charge 15 nC, 15 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 56 mOhms, 56 mOhms Rise Time 8 ns, 8 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 2 P-Channel Typical Turn-Off Delay Time 15 ns, 15 ns Typical Turn-On Delay Time 6 ns, 6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 3.9 mm