Daļas numurs SQ4920EY-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ4920EY-T1_GE3 Apraksts MOSFET 30V 8A 4.4W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Dual Fall Time 8 ns, 8 ns Forward Transconductance - Min 43 S, 43 S Height 1.75 mm Id - Continuous Drain Current 8 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 4.4 W Product Type MOSFET Qg - Gate Charge 30 nC, 30 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 13 mOhms Rise Time 10 ns, 10 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 25 ns, 25 ns Typical Turn-On Delay Time 7 ns, 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 3.9 mm