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BF1105R,215

BF1105R,215
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Specifikācijas

Kategorijas
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
and whole all right. the features no more функционалу check.
to seller thank you! all like the photo. not tried operation. seller store recommend.
Excellent transaction five star service thank you, we will do business again.
No problem, with no contact, selectively checked a few pieces, such as running
Vairāk

Jums var patikt

BF1105R,215
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Cilvēki skatās BF1105R,215, tad nopirka

BF1105R,215
BF1105R,215
Izlase Uz Bom
BF1105R,215
BF1105R,215
Izlase Uz Bom
BF110SD1RE0000
BF110SD1RE0000
Izlase Uz Bom
BF1125-3
BF1125-3
Izlase Uz Bom

BF1105R,215 Jaunumi

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