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BF1105R,215

BF1105R,215
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Specifikācijas

Kategorijas
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
High Quality driver, works excellent. It came to Moscow for 7 days.
Goods came in two weeks. Well packed. Track number tracked
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Vairāk

Jums var patikt

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Cilvēki skatās BF1105R,215, tad nopirka

BF1105R,215
BF1105R,215
Izlase Uz Bom
BF1105R,215
BF1105R,215
Izlase Uz Bom
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BF1105R,215 Jaunumi

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