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IKP15N65H5XKSA1

IKP15N65H5XKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
30 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
105 W
Product Type
IGBT Transistors
Series
TRENCHSTOP 5 H5
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Hello! Order received, very happy. Thank you very much!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Vairāk

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IKP15N65H5XKSA1 Jaunumi

03/15/2023
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Saistītie atslēgvārdi IKP1

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  • IKP15N65H5XKSA1 Specifikācija
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  • IKP15N65H5XKSA1 Tehniskie dati

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