UF3C120080K4S

Attēli ir tikai norādei
Daļas numurs
UF3C120080K4S
Kategorijas
MOSFET
RoHS
Datu lapas
Apraksts
MOSFET 1200V 80mOhm SiC Cascode Fast

Specifikācijas

Kategorijas
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
254.2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

Jaunākās atsauksmes

everything as it is written in the description of the same deductible prodovtsu deserved

My package arrived wet, not know where occurs this fact, but working all right

Quick delivery. Secure packing. Excellent product. Thank you

Hello! Order received, very happy. Thank you very much!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Saistītie atslēgvārdi UF3C

  • UF3C120080K4S Integrēta
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