Daļas numurs SQ3419EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3419EV-T1_GE3 Apraksts MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 31 ns Forward Transconductance - Min 8 s Id - Continuous Drain Current 6.9 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 11.3 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 48 mOhms Rise Time 24 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 8 ns Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V