Daļas numurs SQ2389ES-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ2389ES-T1_GE3 Apraksts MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 4 ns Forward Transconductance - Min 5 s Id - Continuous Drain Current 4.1 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 3 W Product Type MOSFET Qg - Gate Charge 8.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 94 mOhms Rise Time 12 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 1.5 V