Daļas numurs SQ2364EES-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ2364EES-T1_GE3 Apraksts MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 13 ns Forward Transconductance - Min 8.8 S Id - Continuous Drain Current 2 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3 W Product Type MOSFET Qg - Gate Charge 2.5 nC Rds On - Drain-Source Resistance 240 mOhms Rise Time 11 ns Technology SI Transistor Polarity N-Channel Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 460 mV