Daļas numurs SQ3457EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3457EV-T1_GE3 Apraksts MOSFET P-Channel 30V AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 6 ns Forward Transconductance - Min 9 S Id - Continuous Drain Current 6.8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 21 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 35 mOhms Rise Time 9 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 18 ns Typical Turn-On Delay Time 6 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V