Daļas numurs SQ3456BEV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3456BEV-T1_GE3 Apraksts MOSFET 30V 7.8A 4W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 21 S Height 1.1 mm Id - Continuous Drain Current 7.8 A Length 3.05 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 4 W Product Type MOSFET Qg - Gate Charge 10 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 28 mOhms Rise Time 12 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 1.65 mm