Daļas numurs SQ3469EV-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ3469EV-T1_GE3 Apraksts MOSFET 20V 8A 5W AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Forward Transconductance - Min 12 S Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 27 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 29 mOhms Rise Time 10 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 32 ns Typical Turn-On Delay Time 13 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V