Daļas numurs BF 998 E6327 Kategorijas RF MOSFET Transistors RoHS Datu lapas BF 998 E6327 Apraksts RF MOSFET Transistors N-CH 12 V 30 mA
Kategorijas RF MOSFET Transistors Channel Mode Enhancement Configuration Single Dual Gate Height 1 mm Id - Continuous Drain Current 30 mA Length 2.9 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-143 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 200 mW Product Type RF MOSFET Transistors Series BF998 Technology SI Transistor Polarity N-Channel Type RF Small Signal MOSFET Unit Weight Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage 8 V to 12 V Width 1.3 mm