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BF 999 E6327

BF 999 E6327
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Specifikācijas

Kategorijas
RF MOSFET Transistors
Configuration
Single
Height
1 mm
Id - Continuous Drain Current
30 A
Length
2.9 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Series
BF999
Technology
SI
Transistor Polarity
N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
6.5 V
Width
1.3 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
fast delivery
Vairāk

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BF 998 E6327
BF 998 E6327
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BF 998 E6327
BF 998 E6327
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BF 999 E6327
BF 999 E6327
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BF 999 E6327
BF 999 E6327
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Cilvēki skatās BF 999 E6327, tad nopirka

BF 998 E6327
BF 998 E6327
Izlase Uz Bom
BF 998 E6327
BF 998 E6327
Izlase Uz Bom
BF 999 E6327
BF 999 E6327
Izlase Uz Bom
BF 999 E6327
BF 999 E6327
Izlase Uz Bom

BF 999 E6327 Jaunumi

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ADG721 CMOS, Low Voltage, 4 Ω Dual SPST Switch in 3 mm × 2 mm LFCSP
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ADG719 CMOS 1.8 V to 5.5 V, 2.5Ω 2:1 Mux/SPDT Switch in SOT-23

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