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MJD32CT4G

MJD32CT4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD32C
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Vairāk

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Saistītie atslēgvārdi MJD3

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  • MJD32CT4G PDF datu lapa
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  • MJD32CT4G Daļa. \ T
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  • MJD32CT4G Izplatītājs
  • MJD32CT4G PDF
  • MJD32CT4G Komponents
  • MJD32CT4G IC
  • MJD32CT4G Lejupielādēt PDF failu
  • MJD32CT4G Lejupielādēt datu lapu
  • MJD32CT4G Piegāde
  • MJD32CT4G Piegādātājs
  • MJD32CT4G Cena
  • MJD32CT4G Datu lapas
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  • MJD32CT4G Specifikācija
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  • MJD32CT4G Tehniskie dati

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