Daļas numurs MJD31CT4-A Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD31CT4-A Apraksts Bipolar Transistors - BJT LO VLT NPN PWR TRANS
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Configuration Single Emitter- Base Voltage VEBO 5 V Height 2.4 mm Length 6.6 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 15000 mW Product Type BJTs - Bipolar Transistors Qualification AEC-Q101 Series MJD31CT4-A Technology SI Transistor Polarity NPN Unit Weight Width 6.2 mm