MJD31T4G

Attēli ir tikai norādei

Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
40 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD31
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
6.22 mm

Jaunākās atsauksmes

Thanks for your feedback!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Perfectly.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

Saistītie atslēgvārdi MJD3

  • MJD31T4G Integrēta
  • MJD31T4G RoHS
  • MJD31T4G PDF datu lapa
  • MJD31T4G Datu lapas
  • MJD31T4G Daļa. \ T
  • MJD31T4G Pirkt
  • MJD31T4G Izplatītājs
  • MJD31T4G PDF
  • MJD31T4G Komponents
  • MJD31T4G IC
  • MJD31T4G Lejupielādēt PDF failu
  • MJD31T4G Lejupielādēt datu lapu
  • MJD31T4G Piegāde
  • MJD31T4G Piegādātājs
  • MJD31T4G Cena
  • MJD31T4G Datu lapas
  • MJD31T4G Attēls
  • MJD31T4G Bilde
  • MJD31T4G Inventarizācija
  • MJD31T4G Krājumi
  • MJD31T4G Oriģināls
  • MJD31T4G Lētākais
  • MJD31T4G Teicami
  • MJD31T4G Bez svina
  • MJD31T4G Specifikācija
  • MJD31T4G Karstie piedāvājumi
  • MJD31T4G Break cena
  • MJD31T4G Tehniskie dati