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MJD350-13

MJD350-13
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
300 V
Collector- Emitter Voltage VCEO Max
300 V
Configuration
Single
DC Collector/Base Gain hfe Min
30
DC Current Gain hFE Max
30 at 50 mA, 10 V
Emitter- Base Voltage VEBO
3 V
Height
2.4 mm
Length
6.8 mm
Maximum DC Collector Current
0.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DPAK-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1560 mW
Product Type
BJTs - Bipolar Transistors
Series
MJD350
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.2 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Vairāk

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Saistītie atslēgvārdi MJD3

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  • MJD350-13 PDF datu lapa
  • MJD350-13 Datu lapas
  • MJD350-13 Daļa. \ T
  • MJD350-13 Pirkt
  • MJD350-13 Izplatītājs
  • MJD350-13 PDF
  • MJD350-13 Komponents
  • MJD350-13 IC
  • MJD350-13 Lejupielādēt PDF failu
  • MJD350-13 Lejupielādēt datu lapu
  • MJD350-13 Piegāde
  • MJD350-13 Piegādātājs
  • MJD350-13 Cena
  • MJD350-13 Datu lapas
  • MJD350-13 Attēls
  • MJD350-13 Bilde
  • MJD350-13 Inventarizācija
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  • MJD350-13 Oriģināls
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  • MJD350-13 Specifikācija
  • MJD350-13 Karstie piedāvājumi
  • MJD350-13 Break cena
  • MJD350-13 Tehniskie dati

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