Daļas numurs MJD32CQ-13 Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD32CQ-13 Apraksts Bipolar Transistors - BJT Pwr Mid Perf Transistor
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO - 100 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 1.2 V Configuration Single Continuous Collector Current - 3 A DC Collector/Base Gain hfe Min 10 DC Current Gain hFE Max 50 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 3 MHz Maximum DC Collector Current - 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 15 W Product Type BJTs - Bipolar Transistors Qualification AEC-Q101 Technology SI Transistor Polarity PNP