MJD32CQ-13

Attēli ir tikai norādei

Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 100 V
Collector- Emitter Voltage VCEO Max
- 100 V
Collector-Emitter Saturation Voltage
- 1.2 V
Configuration
Single
Continuous Collector Current
- 3 A
DC Collector/Base Gain hfe Min
10
DC Current Gain hFE Max
50
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
3 MHz
Maximum DC Collector Current
- 3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Qualification
AEC-Q101
Technology
SI
Transistor Polarity
PNP

Jaunākās atsauksmes

Отличный продавец . Рекомендую.+++

Hello! Order received, very happy. Thank you very much!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Fast shippng. Good quality. I recomend this seller.

Saistītie atslēgvārdi MJD3

  • MJD32CQ-13 Integrēta
  • MJD32CQ-13 RoHS
  • MJD32CQ-13 PDF datu lapa
  • MJD32CQ-13 Datu lapas
  • MJD32CQ-13 Daļa. \ T
  • MJD32CQ-13 Pirkt
  • MJD32CQ-13 Izplatītājs
  • MJD32CQ-13 PDF
  • MJD32CQ-13 Komponents
  • MJD32CQ-13 IC
  • MJD32CQ-13 Lejupielādēt PDF failu
  • MJD32CQ-13 Lejupielādēt datu lapu
  • MJD32CQ-13 Piegāde
  • MJD32CQ-13 Piegādātājs
  • MJD32CQ-13 Cena
  • MJD32CQ-13 Datu lapas
  • MJD32CQ-13 Attēls
  • MJD32CQ-13 Bilde
  • MJD32CQ-13 Inventarizācija
  • MJD32CQ-13 Krājumi
  • MJD32CQ-13 Oriģināls
  • MJD32CQ-13 Lētākais
  • MJD32CQ-13 Teicami
  • MJD32CQ-13 Bez svina
  • MJD32CQ-13 Specifikācija
  • MJD32CQ-13 Karstie piedāvājumi
  • MJD32CQ-13 Break cena
  • MJD32CQ-13 Tehniskie dati