Daļas numurs MJD32C-13 Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD32C-13 Apraksts Bipolar Transistors - BJT 100V 3A PNP SMT
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.2 V Configuration Single Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 3 MHz Height 2.4 mm Length 6.8 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1560 mW Product Type BJTs - Bipolar Transistors Series MJD32C Technology SI Transistor Polarity PNP Width 6.2 mm