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MJD32T4G

MJD32T4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
40 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD32
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Everything is excellent! recommend this seller!
Fast shippng. Good quality. I recomend this seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Long Service and Russia!
Vairāk

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Saistītie atslēgvārdi MJD3

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