MJD32CG

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD32C
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Jaunākās atsauksmes

Very good!

packed pretty good, all is ok,-seller.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

High Quality driver, works excellent. It came to Moscow for 7 days.

Decent quality, not минвелл certainly, but enough decent

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