MJD31CG

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD31C
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
6.22 mm

Jaunākās atsauksmes

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Hello! Order received, very happy. Thank you very much!

Thank You all fine, packed very well

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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