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IKD10N60RATMA1

IKD10N60RATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
20 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
150 W
Product Type
IGBT Transistors
Series
RC
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Отличный продавец . Рекомендую.+++
Hello! Order received, very happy. Thank you very much!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
Vairāk

Jums var patikt

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