- Daļas numurs
- IKD10N60RAATMA2
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKD10N60RAATMA2
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 20 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Part # Aliases
- Pd - Power Dissipation
- 150 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
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Jaunākās atsauksmes
goods very well received very good quality
Fabrice Cubaynes
Thank You all fine, packed very well
Ulrich Bundke
Perfectly.
Sensofar Tech, SL
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Jums var patikt
Cilvēki skatās IKD10N60RAATMA2, tad nopirka
IKD10N60RAATMA2 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKD1
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- IKD10N60RAATMA2 PDF datu lapa
- IKD10N60RAATMA2 Datu lapas
- IKD10N60RAATMA2 Daļa. \ T
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- IKD10N60RAATMA2 Komponents
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- IKD10N60RAATMA2 Specifikācija
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- IKD10N60RAATMA2 Tehniskie dati
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