- Daļas numurs
- IKD06N60RF
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS TrenchStop
IKD06N60RF
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 12 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 2.41 mm
- Length
- 6.73 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 100 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 6.22 mm
Porduct kategorija
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Engineering Development Tools
46,355 Produkti
Industrial Automation
55,700 Produkti
LED Lighting
67,469 Produkti
Optoelectronics
76,118 Produkti
Passive Components
2,029,037 Produkti
Power
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Semiconductors
575,056 Produkti
Sensors
61,386 Produkti
Test & Measurement
20,391 Produkti
Jaunākās atsauksmes
Very good!
Manuel MAde
packed pretty good, all is ok,-seller.
Julianah Yungkim
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Jums var patikt
Cilvēki skatās IKD06N60RF, tad nopirka
IKD06N60RF Jaunumi
03/14/2023
03/13/2023
03/13/2023
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- IKD06N60RF Attēls
- IKD06N60RF Bilde
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- IKD06N60RF Tehniskie dati
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