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IKB20N65EH5ATMA1

IKB20N65EH5ATMA1
Attēli ir tikai norādei
Daļas numurs
IKB20N65EH5ATMA1
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for h
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
38 A
Continuous Collector Current Ic Max
38 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product Type
IGBT Transistors
Series
650V TRENCHSTOP 5
Technology
SI
Tradename
TRENCHSTOP

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Quickly came to CET, all in one package. Look at the rules
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
it is safe and sound all, thank you seller!
Hello! Order received, very happy. Thank you very much!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Vairāk

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