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IKFW40N60DH3EXKSA1

IKFW40N60DH3EXKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.3 V
Configuration
Single
Continuous Collector Current at 25 C
34 A
Continuous Collector Current Ic Max
44 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
30 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
PG-TO247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
111 W
Product Type
IGBT Transistors
Technology
SI

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
fast delivery, item as described, thanks!!
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
Shipping a little 1 weeks, normal packing, the procedure is complete.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Vairāk

Jums var patikt

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IKFW40N60DH3EXKSA1 Jaunumi

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Saistītie atslēgvārdi IKFW

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  • IKFW40N60DH3EXKSA1 PDF datu lapa
  • IKFW40N60DH3EXKSA1 Datu lapas
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  • IKFW40N60DH3EXKSA1 Izplatītājs
  • IKFW40N60DH3EXKSA1 PDF
  • IKFW40N60DH3EXKSA1 Komponents
  • IKFW40N60DH3EXKSA1 IC
  • IKFW40N60DH3EXKSA1 Lejupielādēt PDF failu
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  • IKFW40N60DH3EXKSA1 Cena
  • IKFW40N60DH3EXKSA1 Datu lapas
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  • IKFW40N60DH3EXKSA1 Inventarizācija
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  • IKFW40N60DH3EXKSA1 Specifikācija
  • IKFW40N60DH3EXKSA1 Karstie piedāvājumi
  • IKFW40N60DH3EXKSA1 Break cena
  • IKFW40N60DH3EXKSA1 Tehniskie dati

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