Daļas numurs IKFW50N60DH3XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IKFW50N60DH3XKSA1 Apraksts IGBT Transistors INDUSTRY 14
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V Configuration Single Continuous Collector Current at 25 C 53 A Continuous Collector Current Ic Max 60 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 30 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case PG-TO247-3 Packaging Tube Part # Aliases Pd - Power Dissipation 145 W Product Type IGBT Transistors Technology SI