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IKFW50N60DH3EXKSA1

IKFW50N60DH3EXKSA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Continuous Collector Current Ic Max
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
30 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
PG-TO247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
130 W
Product Type
IGBT Transistors
Technology
SI

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Seems well have not tested
and whole all right. the features no more функционалу check.
Product as shown in the description, excellent seller, I recommend this seller.
Vairāk

Jums var patikt

IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1
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IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1
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IKFW50N60ETXKSA1
IKFW50N60ETXKSA1
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Cilvēki skatās IKFW50N60DH3EXKSA1, tad nopirka

IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1
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IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1
Izlase Uz Bom
IKFW50N60DH3XKSA1
IKFW50N60DH3XKSA1
Izlase Uz Bom
IKFW50N60ETXKSA1
IKFW50N60ETXKSA1
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IKFW50N60DH3EXKSA1 Jaunumi

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